View HAL400_4254156.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PRELIMINARY DATA SHEET
HAL400 Linear Hall Effect Sensor IC
Edition Jan. 23, 1997 6251-346-3PD
HAL400
Linear Hall Effect Sensor IC in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. Features: The linear CMOS Hall Sensor is used for precise measurements of the magnetic flux. The differential output voltage is proportional to the magnetic flux density at a right angle to the sensitive area. Due to chopper compensation, low magnetic offset and offset drift is achieved. It can be used as a current sensor or can detect any mechanical movement. Very accurate angle measurements or distance measurements can be done. The sensor is very robust and can be used in an electrically and mechanically hostile environment. - low magnetic offset - extremely sensitive - 4.8 to 12 Volt operation - wide temperature range TA = -40 to +150 C - over-voltage protection - differential output - accurate absolute measurements of DC and low frequency magnetic flux densities - on-chip temperature compensation - low 1/f-noise Specifications Marking Code Type A HAL400S
PRELIMINARY DATA SHEET
Temperature Range E 400E C 400C
400A
Operating Junction Temperature Range A: TJ = -40 C to +170 C E: TJ = -40 C to +100 C C: TJ = 0 C to +100 C Designation of Hall Sensors HALXXXPP-T Temperature Range: A, E, or C Package: S for SOT-89A Type: 400 Example: HAL400S-E Type: 400 Package: SOT-89A Temperature Range: TJ = -40 C to +100 C Solderability - Package SOT-89A: according to IEC68-2-58
1 VDD 2 3 4 GND
OUT1 OUT2
Fig. 1: Pin configuration
2
ITT Semiconductors
PRELIMINARY DATA SHEET
HAL400
External filtering or integrating measurement can be done to eliminate the AC component of the signal. So the influence of mechanical stress and temperature cycling is suppressed. No adjustment of magnetic offset is needed. The sensitivity is stabilized over a wide range of temperature and supply voltage due to internal voltage regulation and circuits for temperature compensation.
Functional Description
GND 4
Oscillator
Temp. Dependant Bias
Offset Compensation; Hallplate
Switching Matrix
Offset Compensation (see Fig. 3) The Hall Offset Voltage is the residual voltage measured in absence of a magnetic field (zero-field residual voltage). This voltage is caused by mechanical stress and can be modeled by a displacement of the connections for voltage measurement and/or current supply.
Protection Device
VDD 1
OUT1 2
OUT2 3
Compensation of this kind of offset is done by cyclic commutating the connections for current flow and voltage measurement. - First cycle: The hall supply current flows between the points 4 and 2. In the absence of a magnetic field V13 is the Hall Offset Voltage (+VOffs). In case of a magnetic field, V13 is the sum of the Hall voltage (VH) and VOffs. V13 = VH + VOffs - Second cycle: The hall supply current flows between the points 1 and 3. In the absence of a magnetic field V24 is the Hall Offset Voltage with negativ polarity (-VOffs). In case of a magnetic field, V24 is the difference of the Hall voltage (VH) and VOffs. V24 = VH - VOffs The output shows in the first cycle the sum of the Hall voltage and the offset, in the second the difference of both. The difference of the mean values of VOUT1 and VOUT2 (VOUTDIF) is equivalent to VHall.
Fig. 2: Block diagram of the HAL 400 (top view)
The Linear Hall Sensor measures accurate constant and low frequency magnetic flux densities. The differential output voltage is proportional to the magnetic flux density passing vertically through the sensitive area of the chip. The common mode voltage (average of the voltages on pin 2 and pin 3) of the differential output amplifier is a constant 2.2 V. The differential output voltage consists of two components due to the switching offset compensation technique. The average of the differential output voltage represents the magnetic flux density. This component is overlaid by an differential AC signal at a typical frequency of 147 kHz. The AC signal represents the internal offset voltages of amplifiers and hall plates, that are influenced by mechanical stress and temperature cycling.
V
Note: The numbers do not represent pin numbers.
for Bu0 mT
VOUT1
IC 1 VCM VOUTDIF/2 VOUTDIF VOUTDIF/2 3 VOUTAC VOUT2
1 4 IC 4 VOffs 2
VOffs
2
1/fCH = 6.7 s
3
V
V
a) Offset Voltage Fig. 3: Hall Offset Compensation
b) Switched Current Supply
c) Output Voltage
t
ITT Semiconductors
3
HAL400
Outline Dimensions
4.5 +0.1 0.1 +0.05 0.7 1.7 4 2.25 0.95
PRELIMINARY DATA SHEET
3.1 +0.2 4.0 0.25 0.4 1.5 +0.1 0.4 1.5 3.0 1 2 3 0.4
2.5 +0.1
sensitive area position of hall sensor referenced to the center of package x = 0 0.1 mm y = 0.3 0.1 mm (0.37 mm x 0.17 mm)
top view
10
branded side
max. 0.05 -0.05 10
Fig. 4: Plastic Package SOT-89A Weight approximately 0.04 g Dimensions in mm
Absolute Maximum Ratings Symbol VDD IDDZ IOUT IOUTZ TS TJ
1) tv2 ms 2) tt1000
Parameter Supply Voltage Supply Current through Protection Device Output Current Output Current through Protection Device Storage Temperature Range Junction Temperature Range
Pin No. 1 1 2, 3 1
Min. -15 -4001) -5 -3001) -65 -40 -40
Max. 12 4001) 5 3001) 150 150 1702)
Unit V mA mA mA C C C
h
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
4
ITT Semiconductors
PRELIMINARY DATA SHEET
HAL400
Recommended Operating Conditions
Symbol IOUT IOUT CL Parameter Continuous Output Current Continuous Output Current Load Capacitance Pin No. 2, 3 2, 3 2, 3 Min. -2.25 -1 - Max. 2.25 1 1 Unit mA mA nF Remarks TJ = 25 C TJ = 170 C
VDD 12 V
power dissipation limit
8.0 V 6.8 V
4.8 V 4.5 V
Fig. 5: Recommended Operating Supply Voltage
Extended Operational Range Within the extended operating range, the ICs operate as mentioned in the functional description. The functionality has been tested on samples, whereby the characteristics may lie outside the specified limits.
Symbol VDD IOUT Parameter Supply Voltage Output Current Pin No. 1 2,3 Min. 4.3 -3 Max. 12 3 Unit V mA TJ = -40 C to +170 C Remarks
ITT Semiconductors
EEEEEEEEEEE EEEEEEEEEEE EEEEEEEEEEE EEEEEEEEEEE EEEEEEEEEEE EEEEEEEEEEE EEEEEEEEEEE
-40 C 25 C
min. VDD for specified sensitivity
125 C 150 C TA
5
HAL400
PRELIMINARY DATA SHEET
Electrical and Magnetic Characteristics see Fig. 5 for TA and VDD as not otherwise specified; Typical characteristics for TJ = 25 C, -75 mT < B < 75 mT and VDD = 6.8 V
Symbol IDD IDD VCM CMRR Parameter Supply Current Supply Current under Recommended Operating Conditions Common Mode Output Voltage Pin No. 1 1 Min. 11.8 9.3 Typ. 14.5 14.5 Max. 17.1 18.5 Unit mA mA Test Conditions TJ = 25 C; IOUT1,2 = 0 mA IOUT1,2 = 0 mA IOUT1,2 = 0 mA VCM = (VOUT1 + VOUT2 ) / 2 IOUT1,2 = 0 mA CMRR is limited by the influence of power dissipation B = 60 mT ; TJ = 25 C VOUTDIF = VOUT1 - VOUT2 B = 60 mT VOUTDIF = VOUT1 - VOUT2
2, 3
2.1
2.2
2.3
V
Common Mode Rejection Ratio
2, 3
-2
0
2
mV/V
SB = SB
Differential Magnetic Sensitivity
2-3
37
42.5
49.5
mV/mT
VOUTDIF/B
Differential Magnetic Sensitivity under Recommended Operating Conditions Magnetic Offset
2-3
33
42.5
49.5
mV/mT
Boffset Boffset BOFFSET/ T BW NLdif NLsingle fCH fCH VOUTACpp nmeff fCflicker fCflicker ROUT ROUT RthJSB case
2-3
-1.0
-0.2
1.0
mT
B = 0 mT, IOUT1,2 = 0 mA TJ = 25 C B = 0 mT, IOUT1,2 = 0 mA B = 0 mT, IOUT1,2 = 0 mA
1)
Magnetic Offset over Temperature Magnetic Offset Change due to TA Bandwidth (-3 dB) Non Linearity of Differential Output Non Linearity of Single Ended Output Chopper Frequency Chopper Frequency over Temp. Peak-to-Peak AC Output Voltage Magnetic RMS Differential Broadband Noise Corner Frequency of 1/f Noise Corner Frequency of 1/f Noise Output Resistance
2-3
-1.25
-0.2
1.25
mT T/K
-15
0
15
2-3 2-3
- -
10 0.2
- 1
kHz %
B = 40 mT, B = 60 mT
2, 3
-
2
3
% TJ = 25 C
2, 3 2, 3 2, 3
114 90 0
147 147 0.32
166 166 0.8
kHz kHz V T
2-3
-
10
-
BW = 10 Hz to 10 kHz
2-3
-
10
Hz
B = 0 mT
2-3
-
100
Hz
B = 65 mT IOUT1,2 v2.5 mA ; TJ = 25 C VDD = 6.8 V IOUT1,2 v2.5 mA Fiberglass Substrate 30 mm x 10 mm x 1.5 mm pad size see Fig. 6
2, 3
0
30
50
Output Resistance over Temperature Thermal Resistance Junction to Substrate Backside
2, 3
0
30
150
-
150
200
K/W
1)
with external 2 pole filter (f3db = 5 kHz), VOUTAC is reduced to less than 1 mV
6
ITT Semiconductors
PRELIMINARY DATA SHEET
HAL400
Typical output voltages versus magnetic flux density
V 5
Typical differential output offset voltage versus supply voltage Parameter = TA
V 0.05 0.04 VOFFS 0.03 TA = -40 C TA = 25 C TA = 125 C TA = 150 C
HAL400
TA = 25 C VDD = 6.8 V
HAL400
B = 0 mT
VOUT1 VOUT2
4 VOUT1 3 VOUT2
0.02 0.01 0.00
2
-0.01 -0.02
1
-0.03 -0.04
0 -150 -100 -50
0
50 B
100
150 mT
-0.05
2
4
6
8
10
12 VDD
14 V
Typical magnetic offset of differential output versus supply voltage Parameter = TA mT HAL400
2.5 2.0 BOFFS 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 14 V BOFFSmin TA = -40 C TA = 25 C TA = 125 C TA = 150 C BOFFSmax B = 0 mT
Typical magnetic offset of differential output versus ambient temperature Parameter = VDD mT HAL400
2.5 VDD = 4.8 V 2.0 BOFFS 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -50 -25 75 100 125 150 C TA BOFFSmin for VDD = 6.8 V VDD = 6.0 V VDD = 12 V BOFFSmax for VDD = 6.8V B = 0 mT
2
4
6
8
10
12 VDD
0
25
50
ITT Semiconductors
7
HAL400
PRELIMINARY DATA SHEET
Typical differential sensitivity versus supply voltage Parameter = TA
mV/mT 50
Typical differential sensitivity versus ambient temperature Parameter = VDD
mV/mT 50 45
HAL400
B = 50 mT
HAL400
B = 50 mT
SBDiff 40
SBDiff 40 35
30
30 25
20 TA = -40 C TA = 25 C 10 TA = 125 C TA = 150 C
20 15 10 5
VDD = 4.8 V VDD = 6.0 V VDD = 12 V
0
3
5
7
9
11 VDD
13 V
0 -50 -25
0
25
50
75 100 125 150 C TA
% 1.5
Typical nonlinearity of differential output versus magnetic flux density Parameter = VDD
HAL400
TA = 25 C
% 1.5
Typical nonlinearity of differential output versus magnetic flux density Parameter = TA
HAL400
VDD = 6.8 V 1.0
NLdif
1.0
NLdif
0.5
0.5
0.0
0.0
-0.5
VDD = 4.8 V VDD = 6.0 V
-0.5 TA = -40 C TA = 25 C TA= 125 C TA = 150 C
-1.0
VDD = 12 V
-1.0
-1.5 -80 -60 -40 -20
0
20
40 B
60
80 mT
-1.5 -80 -60 -40 -20
0
20
40 B
60
80 mT
8
ITT Semiconductors
PRELIMINARY DATA SHEET
HAL400
Typical single endend nonlinearity versus magnetic flux density, Parameter = VDD
mT 3
Typical nonlinearity of single ended output versus magnetic flux density, Parameter = TA
% 3
HAL400
TA = 25 C
HAL400
VDD = 6.0 V
NLsing
2
NLdif
2
1
1
0
0
-1 VDD = 4.8 V -2 VDD = 12 V
-1 TA = -40 C TA = 25 C TA = 125 C TA = 150 C
-2
-3 -80 -60 -40 -20
0
20
40 B
60
80 mT
-3 -80 -60 -40 -20
0
20
40 B
60
80 mT
Typical chopper frequency versus supply voltage Parameter = TA
kHz 200 180 fCH 160 140 120 100 80 60 40 20 0 9 10 11 12 13 V VDD TA = -40 C TA = 25 C TA = 125 C TA = 150 C 20 fCH
Typical chopper frequency versus ambient temperature Parameter = VDD
kHz 200 180 160 140 120 100 80 60 40 VDD = 4.8 V VDD = 6.0 V VDD = 12 V
HAL400
HAL400
3
4
5
6
7
8
0 -50 -25
0
25
50
75 100 125 150 C TA
ITT Semiconductors
9
HAL400
PRELIMINARY DATA SHEET
Typical common mode output voltage versus supply voltage Parameter = TA
V 2.5 2.4 2.3 VCM 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 2 4 6 8 10 12 VDD 14 V TA = -40 C TA = 25 C TA = 150 C VCM
Typical common mode output voltage versus ambient temperature Parameter = VDD
V 2.26 2.25 2.24 2.23 2.22 2.21 2.20 2.19 2.18 2.17 2.16 2.15 2.14 -50 -25 0 25 50 75 100 125 150 C TA VDD = 12 V VDD = 4.8 V
HAL400
HAL400
Typical output AC voltage versus supply voltage
mV 500 VOUT1pp, VOUT2pp
Typical output AC voltage versus ambient temperature Parameter = VDD
mVPP 500 VOUT1pp, VOUT2pp
HAL400
TA = 25 C
HAL400
400
400 VDD = 4.8 V VDD = 6.0 V VDD = 12 V
300
300
200
200
100
100
0
2
4
6
8
10
12 VDD
14 V
0 -50 -25
0
25
50
75 100 125 150 C TA
10
ITT Semiconductors
PRELIMINARY DATA SHEET
HAL400
Typical supply current versus supply voltage Parameter = TA
mA 25 20 IDD 15 10 5 0 -5 -10 -15 -20 -25 -15 15 V 0 TA = -40 C TA = 25 C TA = 125 C TA = 150 C 10 IDD 15
Typical supply current versus supply voltage Parameter = TA
mA 20
HAL400
IOUT1,2 = 0 mA
HAL400
IOUT1,2 = 0 mA
5
TA = -40 C TA = 25 C TA = 125 C TA = 150 C 2 4 6 8 10 12 VDD 14 V
-10
-5
0
5
10 VDD
Typical supply current versus temperature Parameter = TA
mA 20
Typical supply current versus output current Parameter = VDD
mA 25
HAL400
B = 0 mT
HAL400
B = 0 mT
IDD 15
IDD 20
15 10 10 VDD = 4.8 V VDD = 6.0 V VDD = 12 V 0 -50 -25 0 -6 5 VDD = 4.8 V VDD = 12 V
5
0
25
50
75 100 125 150 C TA
-4
-2
0
2
4 IOUT1,2
6 mA
ITT Semiconductors
11
HAL400
PRELIMINARY DATA SHEET
Typical dynamic differential output resistance versus temperature Parameter = TA HAL400
200 B = 0 mT 180 ROUT 160 140 120 100 80 60 40 20 0 -50 -25 75 100 125 150 C TA VDD = 4.8 V VDD = 6.0 V VDD = 12 V
Typical magnetic noise spectrum
dBT rms
-100
Hz
HAL400
TA = 25 C
nmeff -110
B = 0 mT B = 65 mT
-120
-130
-140 83 nT Hz
0
25
50
-150 0.1 1.0 10.0 100.0 1k 10000.0 1000000.0 0.1 1 10 100 1000.0 100000.0 Hz 10k 100k 1M f
5.0
Typical magnetic frequency response
dB 20
2.0
HAL400
TA = 25 C 0 dB = 42.5 mV/mT
2.0
sB
10
1.0
0
Fig. 6: Recommended pad size SOT-89A Dimensions in mm
-10
-20
-30
-40 10 10
100 100
1000 1k
10000 10 k fB
100000 100 k
12
ITT Semiconductors
PRELIMINARY DATA SHEET
HAL400
Application Circuits The normal integrating characteristics of a voltmeter is sufficient for signal filtering.
VCC 1 VSUP HAL 400 OUT1 2 4.7n Voltage Meter High
Display the difference between channel 1 and channel 2 to show the Hall voltage. Capacitors 4.7 nF and 330 pF for electromagnetic immunity are recommended.
VSUP 1 VDD HAL 400 OUT1 2 1k 3.3 k 6.8 n 3.3 k 47 n 330 p 47 n Oscilloscope Ch1 1k 330 p
OUT2
3
Low
OUT2
3
Ch2
GND 4
Do not connect OUT1 or OUT2 to Ground.
GND 4
Do not connect OUT1 or OUT2 to Ground.
Fig. 7: Flux density measurement with voltmeter
Fig. 8: Filtering of output signals
VSUP 4.7n 1 VDD HAL 400 OUT1 2 1.5 R - R 330 p GND 4 R-R 3C CMOS OPV + 0.22 R 330 p R+R 0.75 R ADC 1.33 C
VCC
OUT2
3
4.4 C
Do not connect OUT1 or OUT2 to Ground.
Fig. 9: Differential HAL400 output to single-ended output R = 10 k, C = 7.5 nF, R for offset adjustment, BW-3dB = 1.3 kHz
ITT Semiconductors
13
HAL400
PRELIMINARY DATA SHEET
VSUP 2.2 n 4.7 n 1 VDD HAL 400 OUT1 2 4.7 k OUT2 3 4.7 k 330 p GND 4
Do not connect OUT1 or OUT2 to Ground.
VCCy6 V
330 p 4.7 k - CMOS OPV + 4.7 k 4.7 n 4.7 k - 4.7 k 3.0 k 8.2 n CMOS OPV + OUT
1n
VEEx*6 V
Fig. 10: Differential HAL400 output to single-ended output (referenced to ground), filter - BW-3dB = 14.7 kHz
14
ITT Semiconductors
PRELIMINARY DATA SHEET
HAL400
ITT Semiconductors
15
HAL400
HAL400 Documentation History 1. Preliminary data sheet: "HAL 400 Linear Hall Effect Sensor IC", March 29, 1994, 6251-346-1PD. First release of the preliminary data sheet. 2. Preliminary data sheet: "HAL 400 Linear Hall Effect Sensor IC", Aug. 1, 1995, 6251-346-2PD. Second release of the preliminary data sheet. Major changes: - Marking code 3. Preliminary data sheet: "HAL 400 Linear Hall Effect Sensor IC", Jan. 23, 1997, 6251-346-3PD. Third release of the preliminary data sheet. Major changes: - Electrical and Magnetic Characteristics - diagram: Typical output voltages versus magnetic flux density
PRELIMINARY DATA SHEET
ITT Semiconductors Group World Headquarters INTERMETALL Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (1/97) Order No. 6251-346-3PD
Reprinting is generally permitted, indicating the source. However, our consent must be obtained in all cases. Information furnished by ITT is believed to be accurate and reliable. However, no responsibility is assumed by ITT for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of ITT. The information and suggestions are given without obligation and cannot give rise to any liability; they do not indicate the availability of the components mentioned. Delivery of development samples does not imply any obligation of ITT to supply larger amounts of such units to a fixed term. To this effect, only written confirmation of orders will be binding.
16
ITT Semiconductors

▲Up To Search▲

Price & Availability of HAL400

	To Download HAL400 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .